Effect of electric field upon the ZnO growth on sapphire (0001) by atomic layer epitaxy method

被引：15

作者：

Liu, CH ^{[1
]}

Yan, M

Liu, X

Seelig, E

Chang, RPH

机构：

[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

CHEMICAL PHYSICS LETTERS | 2002年 / 355卷 / 1-2期

关键词：

D O I：

10.1016/S0009-2614(02)00162-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper investigates the effect of electric field upon the atomic layer-controlled growth of ZnO on the (0001) sapphire substrates, The results indicated, for the first time, that electric field could make remarkable growth difference for the ZnO films with this method. With a proper electric field, higher quality of epitaxial films has been obtained. Comprehensive analyses revealed that electric field-induced increase of the hydroxyl packing density on the substrate surface could account for the results. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：43 / 47

页数：5

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