SELF-LIMITING GROWTH OF ZINC CHALCOGENIDES AND THEIR SUPERLATTICES

被引：7

作者：

KONAGAI, M

TAKEMURA, Y

YAMASAKI, K

TAKAHASHI, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

THIN SOLID FILMS | 1993年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90165-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnSe, ZnTe and ZnSe ZnTe stained-layer superlattices (SLSs) were grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). In the ALE growth of ZnTe, a self-limiting mechanism was observed, in which the deposition rate saturated at 0.5 monolayers per cycle. ZnSe films were grown by MBE-ALE with N2 gas as dopant, and remarkable effects of ALE on the doping efficiency of nitrogen were observed. Furthermore, a new type of short-period SLS which consists of (ZnSe)m-[(ZnTe)p-(ZnSe)q]n was grown by MBE-ALE. The (ZnSe)6-[(ZnTe)1-(ZnSe)2]2 SLS showed very strong photoluminescence at an emission energy of 2.39 eV at 4.2 K.

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页码：256 / 260

页数：5

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