Analysis of C-V and I-V data of BST thin films

被引：13

作者：

Joshi, V ^{[1
]}

Dacruz, CP ^{[1
]}

Cuchiaro, JD ^{[1
]}

Araujo, CA ^{[1
]}

Zuleeg, R ^{[1
]}

机构：

[1] UNIV CALIF IRVINE,IRVINE,CA 92717

来源：

INTEGRATED FERROELECTRICS | 1997年 / 14卷 / 1-4期

关键词：

D O I：

10.1080/10584589708019985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of Ba0.7Sr0.3TiO3 have been fabricated using Enhanced Metal Organic Decomposition (EMOD) process on Si/SiO2/Ti/Pt substrates. The C-V characteristics of these films reveal a relation of log(1/C-m) proportional to V-A where C-m is the measured capacitance at a frequency of 10 KHz and V-A is the applied voltage. This voltage variable capacitance is characterized by an inverse quadratic distance proportinal charge distribution at the boundary layer between metal and paraelectric material. Above a threshold voltage of 3-5 V the leakage current density exhibits a modified Schottky emission, which states that log (J(L)) proportional to V-1/4. Below this threshold voltage, the origin of the leakage current which is operative in normal circuit applications has been discussed and identified from its temperature variation.

引用

页码：133 / 140

页数：8

共 8 条

[1] INFLUENCE OF SURFACES ON THE DIELECTRIC-PROPERTIES AND LEAKAGE CURRENTS IN PARAELECTRIC (PB0.72LA0.28)TIO3 THIN-FILMS [J].