Epitaxial growth and characterization of silicon carbide films

被引：39

作者：

Dhanaraj, G

Dudley, M

Chen, Y

Ragothamachar, B

Wu, B

Zhang, H

机构：

[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA

[2] SUNY Stony Brook, Dept Mech Engn, Stony Brook, NY 11794 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 02期

关键词：

etching; x-ray diffraction; x-ray topography; chemical vapor deposition; vapor growth; silicon carbide;

D O I：

10.1016/j.jcrysgro.2005.11.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Silicon carbide (SiC) epitaxial layers have been grown in a chemical vapor deposition (CVD) system designed and fabricated in our laboratory. Silicon tetrachloride-propane as well as silane-propane were used as precursor gases. The hot zone was designed based on simulation by using numerical modeling. Growth rates up to 200 mu m could be achieved. A new growth-assisted hydrogen etching was developed to show the distribution of the micropipes present in the substrate. Higher growth rate was observed on off-axis (0 0 0 1) 4 H SiC compared to the on-axis (0 0 0 1) wafer and growth mechanism was explained. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：344 / 348

页数：5

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