Design and fabrication of physical vapor transport system for the growth of SiC crystals

被引：7

作者：

Dhanaraj, G ^{[1
]}

Dudley, M

Ma, RH

Zhang, H

Prasad, V

机构：

[1] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA

[2] SUNY Stony Brook, Dept Mech Engn, Stony Brook, NY 11794 USA

[3] Florida Int Univ, Dept Mech Engn, Miami, FL 33199 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2004年 / 75卷 / 09期

关键词：

D O I：

10.1063/1.1775312

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A physical vapor transport (PVT) system has been designed and fabricated for growing SiC single crystals. Novel multisegmented graphite insulation has been used for improved heat containment in the hotzone. Numerical modeling was applied to obtain the temperature field inside the hotzone, which also helped in predicting various growth parameters. Single crystals of 6H SiC were grown by the modified Lely method using the PVT system developed in the laboratory. The grown crystals were subjected to preliminary characterization. (C) 2004 American Institute of Physics.

引用

页码：2843 / 2847

页数：5

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