Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

被引：29

作者：

Aumer, ME ^{[1
]}

LeBoeuf, SF

Moody, BF

Bedair, SM

Nam, K

Lin, JY

Jiang, HX

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 17期

关键词：

D O I：

10.1063/1.1469219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recombination dynamics of optical transitions as well as strain effects in AlInGaN/In0.08Ga0.92N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, photoluminescence emission line shape, and nonradiative recombination behavior were found to be strong functions of strain as well as localization. The degree of carrier localization was inferred by modeling several aspects of optical behavior obtained from variable temperature time-resolved photoluminescence experiments. According to the modeling results, the degree of localization was found to be a minimum for unstrained QWs and increased as either tensile or compressive strain increased, indicating that InGaN QW microstructure is a function of the lattice-mismatch-induced strain experienced during deposition. (C) 2002 American Institute of Physics.

引用

页码：3099 / 3101

页数：3

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