Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

被引：94

作者：

Aumer, ME ^{[1
]}

LeBoeuf, SF

Bedair, SM

Smith, M

Lin, JY

Jiang, HX

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[2] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.1306648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the luminescence properties of AlInGaN/In0.08Ga0.92N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In0.08Ga0.92N QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)01732-0].

引用

页码：821 / 823

页数：3

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