RT-CW operation of InGaN multi-quantum-well structure laser diodes

被引：20

作者：

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind, Dept Res & Dev, Anan, Tokushima 774, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

continuous-wave operation; localized state; emission;

D O I：

10.1016/S0921-5107(97)00190-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The continuous-wave operation of InGaN multi-quantum-well (MQW) structure laser diodes (LDs) was demonstrated at room temperature with a threshold current of 25 mA, a threshold voltage of 5.8 V, an output power of 30 mW and a high operating temperature of 100 degrees C. The energy differences between the absorption and the emission energy of the InGaN MQW structure LDs were as large as 220 meV at RT. A deep localized state (the localization energy is > 100 meV) was formed in the InGaN well layer due to the InGaN phase separation during the growth. Both the spontaneous emission and the stimulated emission of the LDs originated from these deep localized energy states. The far field pattern showed a higher order transverse mode of the entire 5-mu m-thick epitaxial layer stack, with air and sapphire as the upper and lower cladding layers, respectively. (C) 1997 Elsevier Science S.A.

引用

页码：277 / 284

页数：8

共 16 条

[1] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[2]

Chow WW, 1996, APPL PHYS LETT, V68, P296, DOI 10.1063/1.116064

[3] THEORY OF LASER GAIN IN GROUP-III NITRIDES [J].

CHOW, WW ;

KNORR, A ;

KOCH, SW .

APPLIED PHYSICS LETTERS, 1995, 67 (06) :754-756

[4]

Coldren L. A., 2012, DIODE LASERS PHOTONI, V218

[5] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[6] Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure [J].

Hofstetter, D ;

Bour, DP ;

Thornton, RL ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1650-1652

[7] Gain spectroscopy on InGaN/GaN quantum well diodes [J].

Kuball, M ;

Jeon, ES ;

Song, YK ;

Nurmikko, AV ;

Kozodoy, P ;

Abare, A ;

Keller, S ;

Coldren, LA ;

Mishra, UK ;

DenBaars, SP ;

Steigerwald, DA .

APPLIED PHYSICS LETTERS, 1997, 70 (19) :2580-2582

[8] Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (11) :1568-1570

[9] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

IWASA, N ;

NAGAHAMA, S ;

YAMADA, T ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335

[10]

Nakamura S., 1997, BLUE LASER DIODE GAN

← 1 2 →