GaN microcavities and Bragg reflectors: giant exciton-light coupling

被引：3

作者：

Kavokin, A ^{[1
]}

Gil, B ^{[1
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

nitrides; microcavities; excitons; polaritons; wurzite;

D O I：

10.1016/S0921-5107(98)00326-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Numerical simulation of light reflection from a lambda/2 GaN microcavity with Ga0.8Al0.2N/Ga0.5Al0.5N Bragg mirrors grown on the A-surface of Al2O3 revealed a Rabi-splitting of the order of 50 meV and remarkable optical anisotropy. In a separate Bragg mirror, the exciton interference results in a 95% modulation of reflection spectra. These effects originate from the giant exciton oscillator strength in GaN and a pronounced uniaxial strain in the structure. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：261 / 263

页数：3

共 11 条

[1] Optical properties of wurtzite GaN epilayers grown on A-plane sapphire [J].

Alemu, A ;

Gil, B ;

Julier, M ;

Nakamura, S .

PHYSICAL REVIEW B, 1998, 57 (07) :3761-3764

[2]

Ambacher O, 1997, MRS INTERNET J N S R, V2, pU3

[3]

Born M., 1986, PRINCIPLES OPTICS

[4] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].

Gil, B ;

Briot, O ;

Aulombard, RL .

PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031

[5] Dynamics of excited states in GaN [J].

Hoffmann, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3) :185-191

[6] Determination of the spin-exchange interaction constant in wurtzite GaN [J].

Julier, M ;

Campo, J ;

Gil, B ;

Lascaray, JP ;

Nakamura, S .

PHYSICAL REVIEW B, 1998, 57 (12) :R6791-R6794

[7] Light-absorption effect on Bragg interference in multilayer semiconductor heterostructures [J].

Kavokin, AV ;

Kaliteevski, MA .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) :595-598

[8] EXCITONIC LIGHT-REFLECTION AND ABSORPTION IN SEMICONDUCTOR MICROCAVITIES AT OBLIQUE-INCIDENCE [J].

KAVOKIN, AV ;

KALITEEVSKI, MA .

SOLID STATE COMMUNICATIONS, 1995, 95 (12) :859-862

[9] QUANTUM-WELL EXCITONS IN SEMICONDUCTOR MICROCAVITIES - UNIFIED TREATMENT OF WEAK AND STRONG-COUPLING REGIMES [J].

SAVONA, V ;

ANDREANI, LC ;

SCHWENDIMANN, P ;

QUATTROPANI, A .

SOLID STATE COMMUNICATIONS, 1995, 93 (09) :733-739

[10] Dispersion of bulk exciton polaritons in a semiconductor microcavity [J].

Vladimirova, MR ;

Kavokin, AV ;

Kaliteevski, MA .

PHYSICAL REVIEW B, 1996, 54 (20) :14566-14571

← 1 2 →