A compact scattering model for the nanoscale double-gate MOSFET

被引:154
作者
Rahman, A [1 ]
Lundstrom, MS [1 ]
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
charge carrier processes; degeneracy; device simulation; double-gate MOSFETs; mobility; quantum effects; semiconductor device modeling;
D O I
10.1109/16.987120
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An analytically compact model for the nanoscale double gate metal-oxide semiconductor field effect transistor (MOSFET) based on McKelvey's flux theory is developed. The model is continuous above and below threshold and from the linear to saturation regions. Most importantly, it describes nanoscale MOSFETs from the diffusive to ballistic regimes. In addition to its use in exploring the limits and circuit applications of double gate MOSFETs, the model also serves as an example of how semiclassical scattering theory can be used to develop physically sound models for nanoscale transistors.
引用
收藏
页码:481 / 489
页数:9
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