Correlation between photoluminescence properties and morphology of laser-ablated Si/SiOx nanostructured films

被引：72

作者：

Kabashin, AV

Sylvestre, JP

Patskovsky, S

Meunier, M

机构：

[1] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada

[2] Ecole Polytech, Grp Rech Phys & Technol Couches Minces, Montreal, PQ H3C 3A7, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.1446217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulsed laser ablation in an inert gas has been used to fabricate films containing silicon nanocrystals. We show that film microstructure is one of the main factors, determining long-term photoluminescence (PL) properties. Films with different porosity were found to exhibit PL signals with quite different peak energies, integral intensities and time-dependent evolutions. The distinction of these PL properties is attributed to the different efficiency of surface chemistry interactions between Si nanocrystallites and the ambient atmosphere for films having different porosities. Oxygen-related defects and other mechanisms are discussed to explain the PL properties of the films. (C) 2002 American Institute of Physics.

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页码：3248 / 3254

页数：7

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