Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation

被引：39

作者：

Kabashin, AV

Meunier, M

Leonelli, R

机构：

[1] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada

[2] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期

关键词：

D O I：

10.1116/1.1420494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL) properties of nanostructured Si-based films produced by pulsed laser ablation in a residual gas are studied. Two types of PL signals have been identified. Signals of the first type are sensitive to the ablation conditions with the PL peak position depending on the gas pressure during the deposition. Signals of the second type with PL peaks around 1.6-1.7 and 2.2-2.3 eV are almost independent of the ablation conditions and are mainly determined by the presence of oxygen-related complexes in the film composition. These complexes can be formed throng a prolonged natural oxidation or thermal annealing of the films, or through the direct laser ablation in the presence of oxygen. Possible mechanisms of PL signals are discussed. Q 2001 American Vacuum Society.

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页码：2217 / 2222

页数：6

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