Effects of deposition and post-fabrication conditions on photoluminescent properties of nanostructured Si/SiOx films prepared by laser ablation

被引：18

作者：

Kabashin, AV

Charbonneau-Lefort, M

Meunier, M

Leonelli, R

机构：

[1] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada

[2] Univ Montreal, Dept Phys, Montreal, PQ H3C 3J7, Canada

来源：

APPLIED SURFACE SCIENCE | 2000年 / 168卷 / 1-4期

关键词：

pulsed laser ablation; silicon nanoparticles; photoluminescence;

D O I：

10.1016/S0169-4332(00)00780-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pulsed Laser ablation (PLA) from a Si target in an inert He ambient has been used to produce Si/SiOx nanostructured thin films on Si substrates. After the film exposition to atmospheric air, they exhibited photoluminescence (PL) signals with peak energy between 1.58 and 2.15 eV. It was found that both natural and thermal oxidation of the films can cause dramatic changes in PL properties giving rise to the appearance or considerable enhancement of fixed Pt peaks around 1.6-1.65 and 2.2-2.25 eV, Quite different time-dependent PL degradation behavior under continuous laser irradiation gives an evidence for different mechanisms responsible for the PL peaks, Possible origins of Pt are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：328 / 331

页数：4

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