Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O

被引：22

作者：

Ha, YH ^{[1
]}

Kim, S

Lee, SY

Kim, JH

Baek, DH

Kim, HK

Moon, DW

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

[2] Samsung Elect Co Ltd, Semicond R&D Ctr, Kyungki Do 449900, South Korea

[3] Korea Res Inst Stand & Sci, Surface Anal Grp, Taejon 305606, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期

关键词：

D O I：

10.1063/1.124146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was clearly observed with medium energy ion scattering spectroscopy that the strain in the Si(001)-SiO2 interface of thermal oxides is relaxed by annealing in N2O. The strain relaxation could be correlated with the improved hot-electron hardness of the nitrided oxides compared with the thermal oxides. Based on the direct observation of the strain relaxation, it is suggested that the incorporated N atoms at the interface release the strain and increase the immunity of trap generation under the current stress. (C) 1999 American Institute of Physics. [S0003-6951(99)04523-4].

引用

页码：3510 / 3512

页数：3

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