Generic miniband structure of graphene on a hexagonal substrate

被引：203

作者：

Wallbank, J. R. ^{[1
]}

Patel, A. A. ^{[1
,2
]}

Mucha-Kruczynski, M. ^{[1
]}

Geim, A. K. ^{[3
]}

Falko, V. I. ^{[1
,4
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Indian Inst Technol Kanpur, Dept Phys, Kanpur 208016, Uttar Pradesh, India

[3] Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[4] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 24期

基金：

英国工程与自然科学研究理事会;

关键词：

SCANNING-TUNNELING-MICROSCOPY; BORON-NITRIDE; BAND-STRUCTURE; SCALE;

D O I：

10.1103/PhysRevB.87.245408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a general symmetry-based approach, we provide a classification of generic miniband structures for electrons in graphene placed on substrates with the hexagonal Bravais symmetry. In particular, we identify conditions at which the first moire miniband is separated from the rest of the spectrum by either one or a group of three isolated mini Dirac points and is not obscured by dispersion surfaces coming from other minibands. In such cases, the Hall coefficient exhibits two distinct alternations of its sign as a function of charge carrier density.

引用

页数：7

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