Ferroelectric films and devices

被引：48

作者：

Kingon, AI ^{[1
]}

Streiffer, SK

机构：

[1] N Carolina State Univ, Mat Res Ctr, Raleigh, NC 27695 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 1999年 / 4卷 / 01期

关键词：

D O I：

10.1016/S1359-0286(99)80009-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. One highlight is the report of a complete description of the temperature-dependent dielectric behavior of (Ba,Sr)TiO3 films as a function of strain, composition, and thickness. For the first time, a direct link has been made between the thin film and bulk electrical properties.

引用

页码：39 / 44

页数：6

共 43 条

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