Three-dimensional nanoscale composition mapping of semiconductor nanowires

被引：204

作者：

Perea, DE

Allen, JE

May, SJ

Wessels, BW

Seidman, DN

Lauhon, LJ ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Elect & Comp Sci, Evanston, IL 60208 USA

[3] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

NANO LETTERS | 2006年 / 6卷 / 02期

关键词：

D O I：

10.1021/nl051602p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-atom sensitivity and subnanometer spatial resolution using atom probe tomography. A new class of atom probe, the local electrode atom probe (LEAP) microscope, was used to map the position of single Au atoms in an InAs nanowire and to image the interface between a Au catalyst and InAs in three dimensions with 0.3-nm resolution. These results establish atom probe tomography as a uniquely powerful tool for analyzing the chemical composition of semiconductor nanostructures.

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页码：181 / 185

页数：5

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