Dopant mapping for the nanotechnology age

被引：57

作者：

Castell, MR

Muller, DA

Voyles, PM

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

来源：

NATURE MATERIALS | 2003年 / 2卷 / 03期

关键词：

D O I：

10.1038/nmat840

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The push for smaller microelectronics poses many challenges, such as locating dopant atoms in semiconductors with ever-increasing precision. The ideal technique must be able to detect single dopants with atomic resolution, and identify their electronic state. Neither is an easy task.

引用

收藏

页码：129 / 131

页数：3

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