A study of transparent indium tin oxide (ITO) contact to p-GaN

被引：82

作者：

Kim, DW

Sung, YJ

Park, JW

Yeom, GY

机构：

[1] Sungkyunkwan Univ, Dept Mat Engn, Jangan Gu, Suwon 440746, South Korea

[2] Hanyang Univ, Dept Metallurg Engn, Seongdong Gu, Seoul, South Korea

来源：

THIN SOLID FILMS | 2001年 / 398卷

关键词：

indium tin oxide; rapid thermal annealing (RTA) system; p-GaN; transparent oxide contact;

D O I：

10.1016/S0040-6090(01)01368-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, indium tin oxide (ITO) thin film was evaporated on Mg-doped p-GaN layers with low 10(17)/cm(3), grown by metalorganic chemical vapor deposition (MOCVD) on (0001) sapphire wafers, and its contact properties were investigated. The sheet resistance (Rs) of the evaporated ITO films was several k Omega/rectangle before the annealing but the sheet resistance decreased to 40-50 Omega /rectangle after the annealing in N-2 using a rapid thermal annealing (RTA) system. I-V characteristics and contact resistivities of the evaporated ITO on p-type GaN were investigated as a function of substrate treatment, annealing time, and annealing temperature. The results showed that, in optimized conditions, the ITO contacts with the resistance in the range of low 10(-1) SZ cm(2) could be obtained, and which is probably applicable as the ohmic contact for GaN-based light emitting diodes. Also, at these conditions, the measured optical transmittances of ITO film were above 90% at a wavelength of 420 nm. (blue). (C) 2001 Elsevier Science B.V All rights reserved.

引用

页码：87 / 92

页数：6

共 13 条

[1] Effects of oxygen ion beam plasma conditions on the properties of Indium tin oxide thin films [J].