Titanium nitride thin films deposited by reactive pulsed-laser ablation in RF plasma

被引：22

作者：

Giardini, A ^{[1
]}

Marotta, V ^{[1
]}

Orlando, S ^{[1
]}

Parisi, GP ^{[1
]}

机构：

[1] CNR, IMS, ZOna Ind Tito Scalo, I-85050 Tito, PZ, Italy

来源：

SURFACE & COATINGS TECHNOLOGY | 2002年 / 151卷

关键词：

reactive pulsed laser deposition; titanium nitride; radio frequency (RF) plasma;

D O I：

10.1016/S0257-8972(01)01563-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Titanium nitride thin films were deposited on Si (100) substrates by pulsed laser ablation of a titanium target in a N-2, atmosphere (gas pressure approx. 10 Pa) using a doubled frequency Nd:YAG laser (532 nm) also assisted by a 13.56-MHz radio frequency (RF) plasma. Deposition was carried out at various substrate temperatures ranging from 373 up to 873 K and films were analyzed by X-ray diffractometry, scanning electron microscopy and optical emission spectroscopy. A comparison between the 'normal' pulsed laser deposition (PLD) and the RF plasma-assisted PLD showed the influence of the plasma on the structural characteristics of the thin films. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：316 / 319

页数：4

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