Anisotropy of conduction band g values and interband momentum matrix elements in wurtzite GaN -: art. no. 245209

We calculate the electron effective mass and g-factor tensors in hexagonal semiconductors with wurtzite symmetry in the framework of the 18 X 18 k.p model. The axial anisotropy of the interband Kane matrix elements is taken into account. We evaluate four Kane matrix elements in wurtzite GaN using the experimental data for the conduction electron mass and g-factor values. We identify three major factors that are capable of causing the axial anisotropy of the g values observed in wurtzite GaN: (1) the anisotropy of the interband interaction with the higher conduction bands, (2) the anisotropy of the spin-orbit interaction in the valence and/or higher conduction bands, and (3) the coupling of the Gamma(5)/Gamma(6) states in the valence band.