Comparisons of structural and optical properties of ZnO films grown on (0001) sapphire and GaN/(0001) sapphire template by atmospheric-pressure MOCVD

被引：13

作者：

Dai, JN ^{[1
]}

Liu, HH ^{[1
]}

Fang, WQ ^{[1
]}

Wang, L ^{[1
]}

Pu, Y ^{[1
]}

Jiang, FY ^{[1
]}

机构：

[1] Nanchang Univ, Educ Minist, Engn Res Ctr Luminescence Mat & Devices, Nanchang 330047, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 127卷 / 2-3期

关键词：

MOCVD; ZnO/GaN/Al2O3; AFM; X-ray diffraction; photoluminescence;

D O I：

10.1016/j.mseb.2005.10.024

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

In this paper, we compare the properties of ZnO thin films on (0001) sapphire and GaN/c-Al2O3 templates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using deionized water (H2O) and diethylzinc (DEZn) as the O and Zn precursors, respectively. The atomic force microscopy (AFM) images exhibited that ZnO films grown on GaN/c-AlO3 template had a regular hexagonal columnar and smooth morphology, and the ZnO grown on c-Al2O3 film had the hexagonal pyramid morphology. The full widths at half maximum (FWHMs) of the (0002) and (10-12) omega-rocking curves of ZnO film grown on GaN/c-Al2O3 template were 182 and 358 arcs, respectively, indicating the smaller mosaicity and lower dislocation density of the film compared to ZnO film grown on c-Al2O3. The room temperature PL spectra showed that the PL intensity ratio of the band-edge emission (BEE) to the deep-level emission (DLE) for the ZnO film on GaN/c-Al2O3 template was larger than that of the film on c-Al2O3. Besides, the FXC (or the first excited state of A exciton) and four phonon replicas could be clearly observed in ZnO film on GaN/c-Al2O3 template at 10 K compared to ZnO film on c-Al2O3. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：280 / 284

页数：5

共 24 条

[1]

Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al2O3 [J].