A 475-V high-voltage 6H-SiC lateral MOSFET

被引：29

作者：

Saks, NS ^{[1
]}

Mani, SS

Agarwal, AK

Ancona, MG

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Northrop Grumman Sci & Technol Ctr, Pittsburgh, PA 15235 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 08期

关键词：

MOS devices; MOSFET's; power devices; RE-SURF; SiC; silicon carbide; specific on-resistance;

D O I：

10.1109/55.778167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-voltage lateral MOSFET's on 6H- and 4H-SiC have been fabricated with 400-475 V breakdown voltage using the RESURF principle. An MOS electron inversion layer mobility of about 50 cm(2)/V-s is obtained on 6H-SiC wafers. This mobility is high enough such that the specific on-resistance of the 6H-SiC MOSFET's (similar to 0.29-0.77 Ohm-cm(2)) is limited by the resistance of the drift layer, as desired, However, the implanted drift layer resistance is about ten times higher than expected for the implant dose used. Design and process changes are described to decrease the on-resistance and increase the breakdown voltage. For 4H-SiC, extremely low mobility was obtained, which prevents satisfactory device operation.

引用

页码：431 / 433

页数：3

共 15 条

[1] 1.1 kV 4H-SiC power UMOSFET's [J].