Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition

被引：49

作者：

Tateno, K

Ohiso, Y

Amano, C

Wakatsuki, A

Kurokawa, T

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期

关键词：

D O I：

10.1063/1.119182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical-cavity surface-emitting laser (VCSEL) structures have been grown on GaAs (311)B substrates by metalorganic chemical vapor deposition. C-doped GaAs and AlAs layers with smooth surface morphology and a hole concentration of 10(18) cm(-3) were obtained by optimizing the growth conditions; these conditions contributed to high-quality p-type distributed Bragg reflectors (DBRs). The devices on the (311)B substrates exhibited a threshold current of 9.6 mA, voltage of 2.1 V, and maximum power of 4.1 mW at a 20 mu m phi size; these characteristics are similar to those obtained on (100) substrates. The polarization was aligned to [(2) over bar 3 (3) over bar]. (C) 1997 American Institute of Physics.

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页码：3395 / 3397

页数：3

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