An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)A substrate having low threshold and stable polarization

被引：51

作者：

Takahashi, M ^{[1
]}

Vaccaro, P ^{[1
]}

Fujita, K ^{[1
]}

Watanabe, T ^{[1
]}

Mukaihara, T ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS & INTELLIGENCE LAB,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 06期

关键词：

D O I：

10.1109/68.502078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated an InGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs(311)A substrate by molecular beam epitaxy (MBE) and demonstrated continuous wave operation at room temperature, A threshold current density of 80 A/cm(2)/well and very stable polarization characteristics up to 2.7 times the threshold were achieved, The polarization state with the highest optical intensity was oriented along the [<(2)over bar 33>] direction, which is the crystallographic axis exhibiting the maximum gain, An extinction ratio of more than 12.7 dB was obtained between two orthogonal polarization states. The high and anisotropic gain of a (311)A-oriented VCSEL will drastically improve the device performance by optimization and process engineering.

引用

页码：737 / 739

页数：3

共 8 条

[1] STRAIN AND CRYSTALLOGRAPHIC ORIENTATION EFFECTS ON INTERBAND OPTICAL MATRIX-ELEMENTS AND BAND-GAPS OF [11/]-ORIENTED III-V EPILAYERS [J].