Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

被引：40

作者：

Kawasuso, A ^{[1
]}

Redmann, F

Krause-Rehberg, R

Weidner, M

Frank, T

Pensl, G

Sperr, P

Triftshäuser, W

Itoh, H

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle An Der Saale, Germany

[2] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany

[3] Univ Bundeswher Munchen, D-85577 Neubiberg, Germany

[4] Japan Atom Energy Res Inst, Gunma 3701292, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1426259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealing behavior of vacancies and the Z(1/2) levels in n-type 4H-SiC epilayers after 2 MeV electron irradiation has been studied using positron annihilation and deep-level transient spectroscopy. Isochronal annealing studies indicate that silicon vacancy-related defects are primarily responsible for positron trapping. The Z(1/2) levels are the predominant deep centers after irradiation and subsequent annealing at 1200 degreesC. Both the positron-trapping rate at vacancies and the Z(1/2) concentration decrease in a similar manner while annealing from 1200 to 1500 degreesC. It is thus proposed that the Z(1/2) levels originate from silicon vacancy-related defects. (C) 2001 American Institute of Physics.

引用

页码：3950 / 3952

页数：3

共 20 条

[1]

Evaluation of some basic positron-related characteristics of SiC [J].

Brauer, G ;

Anwand, W ;

Nicht, EM ;

Kuriplach, J ;

Sob, M ;

Wagner, N ;

Coleman, PG ;

Puska, MJ ;

Korhonen, T .

PHYSICAL REVIEW B, 1996, 54 (04) :2512-2517

[2]

ESR studies of defects in p-type 6H-SiC irradiated with 3MeV-electrons [J].

Cha, D ;

Itoh, H ;

Morishita, N ;

Kawasuso, A ;

Ohshima, T ;

Watanabe, Y ;

Ko, J ;

Lee, K ;

Nashiyama, I .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :615-618

[3]

Dalibor T, 1996, INST PHYS CONF SER, V142, P517

[4]

CARBON AND SILICON VACANCIES IN ELECTRON-IRRADIATED 6H-SIC [J].

DANNEFAER, S ;

CRAIGEN, D ;

KERR, D .

PHYSICAL REVIEW B, 1995, 51 (03) :1928-1930

[5]

Correlation between DLTS and photoluminescence in he-implanted 6H-SiC [J].

Frank, T ;

Pensl, G ;

Bai, S ;

Devaty, RP ;

Choyke, WJ .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :753-756

[6]

Deep level defects in electron-irradiated 4H SiC epitaxial layers [J].

Hemmingsson, C ;

Son, NT ;

Kordina, O ;

Bergman, JP ;

Janzen, E ;

Lindstrom, JL ;

Savage, S ;

Nordell, N .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6155-6159

[7]

Observation of negative-U centers in 6H silicon carbide [J].

Hemmingsson, CG ;

Son, NT ;

Janzén, E .

APPLIED PHYSICS LETTERS, 1999, 74 (06) :839-841

[8]

Negative-U centers in 4H silicon carbide [J].

Hemmingsson, CG ;

Son, NT ;

Ellison, A ;

Zhang, J ;

Janzen, E .

PHYSICAL REVIEW B, 1998, 58 (16) :10119-10122

[9]

Itoh H, 1997, PHYS STATUS SOLIDI A, V162, P173, DOI 10.1002/1521-396X(199707)162:1<173::AID-PSSA173>3.0.CO

[10]

2-W

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