TEM study of {10(1)over-bar0} inversion domains in GaN layers grown on {0001} sapphire substrate

被引：18

作者：

Potin, V ^{[1
]}

Ruterana, P ^{[1
]}

Nouet, G ^{[1
]}

机构：

[1] Inst Sci Mat & Rayonnement, Lab Etud & Rech Mat, CNRS, F-14050 Caen, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

inversion domains; gallium nitride; high resolution electron microscopy; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(98)00407-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomic structure of nanometric inversion domains in GaN layers has been investigated using high resolution electron microscopy and image simulation. These domains are limited by {10 (1) over bar 0} planes; they cross the whole epitaxial layers until the surface in the center of small pyramids. For image simulation, six models were considered and a good agreement with the observations was obtained for a model characterized by an inversion and a c/2 translation. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：173 / 176

页数：4

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