Zitterbewegung of electrons and holes in III-V semiconductor quantum wells

被引:81
作者
Schliemann, J [1 ]
Loss, D
Westervelt, RM
机构
[1] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
[2] Univ Basel, Dept Phys & Astron, CH-4056 Basel, Switzerland
[3] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
关键词
D O I
10.1103/PhysRevB.73.085323
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The notion of zitterbewegung is a long-standing prediction of relativistic quantum mechanics. Here we extend earlier theoretical studies on this phenomenon for the case of III-V zinc-blende semiconductors which exhibit particularly strong spin-orbit coupling. This property makes nanostructures made of these materials very favorable systems for possible experimental observations of zitterbewegung. Our investigations include electrons in n-doped quantum wells under the influence of both Rashba and Dresselhaus spin-orbit interactions, and also the two-dimensional hole gas. Moreover, we give a detailed anaysis of electron zitterbewegung in quantum wires which appear to be particularly suited for experimentally observing this effect.
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页数:9
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