Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

被引:111
作者
Gogurla, Narendar [1 ]
Mondal, Suvra P. [1 ,2 ]
Sinha, Arun K. [1 ]
Katiyar, Ajit K. [1 ]
Banerjee, Writam [1 ]
Kundu, Subhas C. [3 ]
Ray, Samit K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
[2] Natl Inst Technol Agartala, Dept Phys, Agartala 799055, India
[3] Indian Inst Technol, Dept Biotechnol, Kharagpur 721302, W Bengal, India
关键词
FIBROIN;
D O I
10.1088/0957-4484/24/34/345202
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.
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页数:7
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