Consistent model for short-channel nMOSFET after hard gate oxide breakdown

被引：69

作者：

Kaczer, B ^{[1
]}

Degraeve, R ^{[1
]}

De Keersgieter, A ^{[1
]}

Van de Mieroop, K ^{[1
]}

Simons, V ^{[1
]}

Groeseneken, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 03期

关键词：

CMOSFETs; dielectric breakdown; equivalent circuits; simulation;

D O I：

10.1109/16.987123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dissimilar post-hard-breakdown nMOSFET characteristics are consistently explained by the location of a constant-size breakdown path. Device simulations with the breakdown path modeled as a narrow inclusion of highly doped n-type silicon well reproduce all postbreakdown nFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. An equivalent circuit describing the gate current in an nFET after hard gate-oxide breakdown is proposed.

引用

页码：507 / 513

页数：7

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