Interstitial-based vacancy annealing in 4H-SiC

被引:16
作者
Rauls, E
Staab, TEM
Hajnal, Z
Frauenheim, T
机构
[1] Univ Gesamthsch Paderborn, Fachbereich Theoret Phys, D-33100 Paderborn, Germany
[2] Helsinki Univ Technol, Phys Lab, Helsinki, Finland
关键词
SiC; interstitials diffusion; vacancies;
D O I
10.1016/S0921-4526(01)00776-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The migration of carbon interstitials through the 4H-SiC lattice and their recombination with vacancies has been investigated theoretically within the self-consistent charge density functional based tight-binding (SCC-DFTB) method. For vacancy-interstitial pairs created by irradiation, the capture radius of silicon and carbon vacancies has been examined, showing that interstitial migration through the otherwise perfect lattice starts getting important for distances larger than four nearest-neighbor atomic distances. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:645 / 648
页数:4
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