A comparison of RHEED reconstruction phases on (100) InAs, GaAs and InP

被引:24
作者
Junno, B
Jeppesen, S
Miller, MS
Samuelson, L
机构
[1] Department of Solid State Physics, Lund University, Box 118
关键词
D O I
10.1016/0022-0248(96)00009-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have begun to compile a list of the surface reconstructions for (001) InAs, GaAs and InP. The symmetries that we have observed include 1 x 1, 2 x 1, 2 x 4, 4 x 6, 3 x 4, 4 x 3, 2 x 3, 3 x 3, 1 x 3, 3 x 1, 3 x 2, 4 x 1 and 8 x 2, These reconstructions were observed during various growth and non-growth conditions in order to make up phase diagrams that depend on the group V and III fluxes and the temperature. Some of the phase boundaries can serve as temperature reference points in our epitaxy machine. A comparison of the different semiconductor surfaces is made and the growth properties of these surfaces are discussed.
引用
收藏
页码:66 / 70
页数:5
相关论文
共 9 条
[1]  
BEHREND J, IN PRESS
[2]  
BIEGLSEN DK, 1991, PHYS REV B, V41, P5701
[3]   RECONSTRUCTION AND DEFECT STRUCTURE OF VICINAL GAAS(001) AND ALXGA1-XAS(001) SURFACES DURING MBE GROWTH [J].
DAWERITZ, L ;
HEY, R .
SURFACE SCIENCE, 1990, 236 (1-2) :15-22
[4]   OBSERVATIONS ON RHEED INTENSITY OSCILLATIONS DURING THE GROWTH OF GASB AND INAS BY MOMBE [J].
KANEKO, T ;
ASAHI, H ;
OKUNO, Y ;
KANG, TW ;
GONDA, S .
JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :69-76
[5]   CORRECT SUBSTRATE-TEMPERATURE MONITORING WITH INFRARED OPTICAL-PYROMETER FOR MOLECULAR-BEAM EPITAXY OF III-V SEMICONDUCTORS [J].
MIZUTANI, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1671-1677
[6]   OBSERVATIONS ON INTENSITY OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP [J].
MORISHITA, Y ;
MARUNO, S ;
GOTODA, M ;
NOMURA, Y ;
OGATA, H .
APPLIED PHYSICS LETTERS, 1988, 53 (01) :42-44
[7]   THE APPLICATION OF SCANNING TUNNELING MICROSCOPY TO THE STUDY OF MOLECULAR-BEAM EPITAXY [J].
PASHLEY, MD .
JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :473-481
[8]   CBE GROWTH OF (001) GAAS - RHEED AND RD STUDIES [J].
SAMUELSON, L ;
JUNNO, B ;
PAULSSON, G ;
FORNELL, JO ;
LEDEBO, L .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :23-29
[9]   INSITU GROWTH-RATE MEASUREMENTS DURING MOLECULAR-BEAM EPITAXY USING AN OPTICAL-PYROMETER [J].
SPRINGTHORPE, AJ ;
HUMPHREYS, TP ;
MAJEED, A ;
MOORE, WT .
APPLIED PHYSICS LETTERS, 1989, 55 (20) :2138-2140