CBE GROWTH OF (001) GAAS - RHEED AND RD STUDIES

被引：9

作者：

SAMUELSON, L ^{[1
]}

JUNNO, B ^{[1
]}

PAULSSON, G ^{[1
]}

FORNELL, JO ^{[1
]}

LEDEBO, L ^{[1
]}

机构：

[1] EPIQUIP AB,S-22370 LUND,SWEDEN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90432-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel type of epitaxial growth system has been designed and optimized for studies of surface physics and epitaxial growth during chemical beam epitaxy (CBE). The work presented here deals with the growth of GaAs on (001) oriented GaAs, and is specifically focused on detailed studies of the surface modifications appearing during exposure to triethylgallium (TEG) or tertiarybutylarsine (TBA), as well as during continuous growth. Reflection high-energy electron diffraction (RHEED) is used to characterize surface reconstructions and to monitor monolayer growth oscillations. Optical reflectance-difference (RD) is used as a very sensitive probe to track the chemical admixture and the concentration of dimers on the surface. Examples are given of direct correlations between characteristic RD features and specific surface reconstructions as determined by RHEED. The surface reconstruction phase diagram for CBE growth of (001) GaAs using TBA is presented and compared with the case for MBE growth.

引用

页码：23 / 29

页数：7

共 14 条

[1] REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS [J].