Structural change during annealing of amorphous indium-tin oxide films deposited by sputtering with H2O-addition

被引：39

作者：

Nishimura, E

Ando, M

Onisawa, K

Takabatake, M

Minemura, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 5A期

关键词：

indium-tin oxide (ITO); transparent electrode; thin film; amorphous; crystallization; sputtering; resistivity; thermal desorption spectroscopy (TDS); X-ray diffraction (XRD); scanning electron microscopy (SEM);

D O I：

10.1143/JJAP.35.2788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes the effects of annealing on electric properties and structure of amorphous indium-tin oxide (ITO) films deposited hy sputtering at room temperature and with H2O addition. The Blm resistivity was increased by annealing at 150-200 degrees C; in this temperature range the growth of ITO crystallites dispersed in the amorphous ITO phase was observed. This increased resistivity was found to Lr due to decreases in both Hall mobility (mu(H)) and carrier density (n) of the films. Measurements of thermal desorption spectroscopy revealed that two different adsorption states, in terms of H2O molecules which are due to the hydrogen-bonded H2O and OH species, were formed in amorphous ITO films during film deposition and the subsequent annealing process. Factors in the decreases of mu(H) and n were discussed on the basis of Che experimental results obtained.

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页码：2788 / 2792

页数：5

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