Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

被引：47

作者：

Andleeb, Shaista ^{[1
,2
]}

Singh, Arun Kumar ^{[1
,2
,3
]}

Eom, Jonghwa ^{[1
,2
]}

机构：

[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[3] Motilal Nehru Natl Inst Technol, Dept Phys, Allahabad 211004, Uttar Pradesh, India

来源：

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2015年 / 16卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

molybdenum disulfide; field-effect transistor; p-toluene sulfonic acid; doping; MONOLAYER MOS2; TRANSISTORS; TRANSITION; PHOTOLUMINESCENCE;

D O I：

10.1088/1468-6996/16/3/035009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of similar to 4 without degrading the electrical characteristics of MoS2 devices.

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页数：5

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