Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

被引：361

作者：

Jariwala, Deep ^{[1
]}

Sangwan, Vinod K. ^{[1
]}

Late, Dattatray J. ^{[1
]}

Johns, James E. ^{[1
]}

Dravid, Vinayak P. ^{[1
]}

Marks, Tobin J. ^{[1
,2
]}

Lauhon, Lincoln J. ^{[1
]}

Hersam, Mark C. ^{[1
,2
,3
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Med, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 17期

基金：

美国国家科学基金会;

关键词：

VALLEY POLARIZATION; SCATTERING MOBILITY; ELECTRON-MOBILITY; SILICON; PHOTOTRANSISTORS;

D O I：

10.1063/1.4803920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm(2)/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 45 条

[1]

[Anonymous], 2010, PHYS REV LETT, DOI DOI 10.1103/PHYSREVLETT.105.065003

[2]

[Anonymous], ARXIV13014947V1

[3] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS [J].