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Proposed two-level acceptor-donor (AD) center and the nature of switching traps in irradiated MOS structures

被引：14
作者：
Pershenkov, VS
Cherepko, SV
Sogoyan, AV
Belyakov, VV
Ulimov, VN
Abramov, VV
Shalnov, AV
Rusanovsky, VI
机构：
[1] MOSCOW SPECIALIZED ELECT SYST,MOSCOW,RUSSIA
[2] MOSCOW SCI INSTRUMENTS RES INST,MOSCOW,RUSSIA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期
关键词：
D O I：
10.1109/23.556839
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A phenomenological model of switching traps in irradiated metal-oxide-semiconductor (MOS) structures is presented. After electron capture, E(gamma)' center is supposed to be transformed into new defect that is responsible for switching behavior. This new defect is assumed to have two energy levels (acceptor- and donor-like) and could easily communicate with substrate free carriers. Energy level position of the E(gamma)', center, latent build-up of interface traps and negative oxide-trapped charge are also discussed.
引用
收藏
页码：2579 / 2586
页数：8
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