MODELING THE ANNEAL OF RADIATION-INDUCED TRAPPED HOLES IN A VARYING THERMAL ENVIRONMENT

The anneal of radiation induced trapped holes in MOS transistors is found to be thermally activated. A quantitative, physical model based on thermal emission and tunneling is developed which accurately predicts the anneal of radiation-induced trapped holes in constant or time varying thermal environments. Data is presented which quantitatively verifies the accuracy of the model for temperatures between 25 and 160° C. The model results are demonstrated to be consistent with a large body of data in the literature. This model provides the basis for developing accurate quantitative screens for the rebound failure mechanism. © 1990 IEEE