Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

被引：7

作者：

Kung, P ^{[1
]}

Walker, D ^{[1
]}

Sandvik, P ^{[1
]}

Hamilton, M ^{[1
]}

Diaz, J ^{[1
]}

Lee, IH ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

PHOTODETECTORS: MATERIALS AND DEVICES IV | 1999年 / 3629卷

关键词：

GaN; lateral epitaxial overgrowth; ultraviolet; Schottky; MSM; photodetector; responsivity;

D O I：

10.1117/12.344586

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the growth and characterization of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiOx mask stripes.

引用

页码：223 / 229

页数：7