Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

被引：58

作者：

Gan, CL

Thompson, CV

Pey, KL

Choi, WK

Tay, HL

Yu, B

Radhakrishnan, MK

机构：

[1] Singapore MIT Alliance, Singapore 117576, Singapore

[2] MIT, Ctr Mat Sci & Engn, Cambridge, MA 02139 USA

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[4] Inst Microelect, Singapore 117685, Singapore

[5] Singapore MIT Alliance, Singapore 117685, Singapore

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 27期

关键词：

D O I：

10.1063/1.1428410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration in the lower metal (M1) and the upper metal (M2) of Cu dual-damascene interconnections has been studied. The failure times of M2 test structures are significantly longer than those of identical M1 structures. It is proposed that this asymmetry is the result of a difference in the location of void formation and growth, which is believed to be related to the ease of electromigration-induced void nucleation and growth at the Cu/Si3N4 interface. Asymmetric via reliability is therefore an intrinsic characteristic of current Cu interconnect technology. (C) 2001 American Institute of Physics.

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页码：4592 / 4594

页数：3

相关论文

共 11 条

[1] Microstructure and electromigration in copper damascene lines [J].

Arnaud, L ;

Tartavel, G ;

Berger, T ;

Mariolle, D ;

Gobil, Y ;

Touet, I .

MICROELECTRONICS RELIABILITY, 2000, 40 (01) :77-86

[2] THE ELECTROMIGRATION SHORT-LENGTH EFFECT IN TI-ALCU-TI METALLIZATION WITH TUNGSTEN STUDS [J].

FILIPPI, RG ;

BIERY, GA ;

WACHNIK, RA .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3756-3768

[3] Copper interconnections and reliability [J].

Hu, CK ;

Harper, JME .

MATERIALS CHEMISTRY AND PHYSICS, 1998, 52 (01) :5-16

[4] Electromigration path in Cu thin-film lines [J].

Hu, CK ;

Rosenberg, R ;

Lee, KY .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :2945-2947

[5] Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections [J].

Hu, CK ;

Gignac, L ;

Malhotra, SG ;

Rosenberg, R ;

Boettcher, S .

APPLIED PHYSICS LETTERS, 2001, 78 (07) :904-906

[6] Electromigration induced failure as a function of via interface [J].

Kisselgof, L ;

Lloyd, JR .

MATERIALS RELIABILITY IN MICROELECTRONICS VII, 1997, 473 :401-406

[7] ELECTROMIGRATION IN COPPER CONDUCTORS [J].

LLOYD, JR ;

CLEMENT, JJ .

THIN SOLID FILMS, 1995, 262 (1-2) :135-141

[8] Surface electromigration in copper interconnects [J].

McCusker, ND ;

Gamble, HS ;

Armstrong, BM .

MICROELECTRONICS RELIABILITY, 2000, 40 (01) :69-76

[9] Direct observation of a critical length effect in dual-damascene Cu/oxide interconnects [J].

Ogawa, ET ;

Bierwag, AJ ;

Lee, KD ;

Matsuhashi, H ;

Justison, PR ;

Ramamurthi, AN ;

Ho, PS ;

Blaschke, VA ;

Griffiths, D ;

Nelsen, A ;

Breen, M ;

Havemann, RH .

APPLIED PHYSICS LETTERS, 2001, 78 (18) :2652-2654

[10] Microtexture and electromigration-induced drift in electroplated damascene Cu [J].

Proost, J ;

Hirato, T ;

Furuhara, T ;

Maex, K ;

Celis, JP .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) :2792-2802