The Schottky limit and a charge neutrality level found on metal/6H-SiC interfaces

被引：20

作者：

Hara, S ^{[1
]}

机构：

[1] AIST, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

SURFACE SCIENCE | 2001年 / 494卷 / 03期

关键词：

Schottky barrier; metal-semiconductor interfaces; interface states; surface electronic phenomena (work function; surface potential; surface states etc.); silicon carbides; evaporation and sublimation; oxidation; etching;

D O I：

10.1016/S0039-6028(01)01596-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the Schottky limit and a charge neutrality level (CNL) experimentally demonstrated at metat/6H-SiC(0 0 0 1) interfaces. An interface with the Schottky limit was formed by dipping SiC surfaces in boiling pure water before metallization. The total density of interface states, D-it, was a drastically small value of 4.6 x 10(10) states cm(-2)/eV, indicating the density of the metal induced gap states was less than this value. In contrast, at incompletely passivated interfaces without the boiling water dipping process, a broad continuum of interface states with D-it of 2.8 x 10(13) states cm(-2)/eV was observed with the CNL located at 0.797 eV from the conduction band minimum. The origin of these interface states was found to be in the disordered interface layers. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：L805 / L810

页数：6

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