METAL-SEMICONDUCTOR INTERFACES

被引：64

作者：

BRILLSON, LJ

机构：

[1] Xerox Webster Research Center, Webster, NY 14580, 800 Phillips Road

来源：

SURFACE SCIENCE | 1994年 / 299卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)90706-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Progress in understanding the chemical and electronic properties of metal-semiconductor interfaces has depended heavily on the use of surface science techniques. This article provides an overview of the wide range of atomic-scale chemical phenomena observed at metal-semiconductor interfaces and their relation to contact charge transfer and macroscopic Schottky barrier formation. Particular emphasis is given to this author's research contributions over the past two decades.

引用

页码：909 / 927

页数：19

共 121 条

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