Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition

被引：4

作者：

Mebarki, B

Sumiya, S

Yoshida, R

Ito, M

Hori, M

Goto, T

Samukawa, S

Tsukada, T

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] NEC Corp Ltd, Tokyo, Japan

[3] ANELVA, Tokyo, Japan

来源：

MATERIALS LETTERS | 1999年 / 41卷 / 01期

关键词：

silicon thin films; polycrystalline; high frequency plasma; silane/hydrogen mixtures; low temperatures;

D O I：

10.1016/S0167-577X(99)00097-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline silicon (poly-Si) thin films with crystalline fraction of nearly 75%, and 82% were successfully synthesized at low substrate temperatures of 100 and 300 degrees C, respectively, by using ultra-high-frequency plasma employed silane/hydrogen mixture gases. In situ ellipsometry analysis confirmed that a relatively thin amorphous intermediate layer less than 15 nm in thickness was formed at a substrate temperature of 300 degrees C in the early stage of the growth. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：16 / 19

页数：4

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