A facile process for soak-and-peel delamination of CVD graphene from substrates using water

被引:78
作者
Gupta, Priti [1 ]
Dongare, Pratiksha D. [1 ,2 ]
Grover, Sameer [1 ]
Dubey, Sudipta [1 ]
Mamgain, Hitesh [3 ]
Bhattacharya, Arnab [1 ]
Deshmukh, Mandar M. [1 ]
机构
[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
[2] Birla Inst Technol & Sci, Pilani 333031, Rajasthan, India
[3] WITec GmbH, D-89081 Ulm, Germany
来源
SCIENTIFIC REPORTS | 2014年 / 4卷
关键词
FEW-LAYER GRAPHENE; RAMAN-SPECTROSCOPY; LARGE-AREA; GRAPHITE; GROWTH; TRANSPORT; FILMS; DEFECTS;
D O I
10.1038/srep03882
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We demonstrate a simple technique to transfer chemical vapour deposited (CVD) graphene from copper and platinum substrates using a soak-and-peel delamination technique utilizing only hot deionized water. The lack of chemical etchants results in cleaner CVD graphene films minimizing unintentional doping, as confirmed by Raman and electrical measurements. The process allows the reuse of substrates and hence can enable the use of oriented substrates for growth of higher quality graphene, and is an inherently inexpensive and scalable process for large-area production.
引用
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页数:6
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