InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates

被引：7

作者：

Guo, SP ^{[1
]}

Shen, A ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, Y ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Lab Elect Intelligent Syst, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

基金：

日本学术振兴会;

关键词：

nanostructures; InAs; (In; Mn)As; MBE; AFM; surfactant;

D O I：

10.1016/S0022-0248(98)01442-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InAs and (In,Mn)As nanostructures grown on GaAs(1 0 0), (2 1 1)B and (3 1 1)B substrates have been studied. Quantum dots (QDs) were observed when InAs was grown on GaAs(1 0 0) (or (3 1 1)B). QDs with bimodal size distribution were formed when InAs was deposited on GaAs(2 1 1)B at lower growth temperatures(T-s) whereas quantum dashes (QDHs) were observed at higher T-s.(-)(In,Mn)As QDs grown on GaAs(1 0 0) showed a broad range of dot sizes with irregular shape, (In,Mn)As QDs with bimodal size distribution were observed for the structure grown on GaAs(3 1 I)B. (In,Mn)As QDs grown on GaAs(2 1 1)B showed improved size uniformity compared to those grown on GaAs(1 0 0) and (3 1 1)B. The effects of Mn as a surfactant on InAs nanostructures were also studied. (C) 1999 Elsevier Science B.V. All lights reserved.

引用

页码：684 / 688

页数：5

共 10 条

[1] InAs self-organized quantum dashes grown on GaAs (211)B [J].

Guo, SP ;

Ohno, H ;

Shen, A ;

Matsukura, F ;

Ohno, Y .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2738-2740

[2] Self-organized (In, Mn) as diluted magnetic semiconductor nanostructures on GaAs substrates [J].

Guo, SP ;

Ohno, H ;

Shen, A ;

Matsukura, F ;

Ohno, Y .

APPLIED SURFACE SCIENCE, 1998, 130 :797-802

[3] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS [J].

HATAMI, F ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BOHRER, J ;

HEINRICHSDORFF, F ;

BEER, M ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J ;

RICHTER, U ;

IVANOV, SV ;

MELTSER, BY ;

KOPEV, PS ;

ALFEROV, ZI .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :656-658

[4] MOLECULAR-BEAM EPITAXY GROWTH OF QUANTUM DOTS FROM STRAINED COHERENT UNIFORM ISLANDS OF INGAAS ON GAAS [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

FAFARD, S ;

MERZ, JL ;

PETROFF, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1063-1066

[5] NATURE OF STRAINED INAS 3-DIMENSIONAL ISLAND FORMATION AND DISTRIBUTION ON GAAS(100) [J].

MADHUKAR, A ;

XIE, Q ;

CHEN, P ;

KONKAR, A .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2727-2729

[6] LOCAL MN STRUCTURES IN III-V DILUTED MAGNETIC SEMICONDUCTOR (IN,MN)AS [J].

MUNEKATA, H ;

CHANG, LL ;

KROL, A ;

SOO, YL ;

HUANG, S ;

MING, ZH ;

KAO, YH .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :528-531

[7] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852

[8] NEW III-V-DILUTED MAGNETIC SEMICONDUCTORS [J].

OHNO, H ;

MUNEKATA, H ;

VONMOLNAR, S ;

CHANG, LL .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) :6103-6108

[9] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[10] Transition from self-organized InSb quantum-dots to quantum dashes [J].

Utzmeier, T ;

Postigo, PA ;

Tamayo, J ;

Garcia, R ;

Briones, F .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2674-2676

← 1 →