Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots -: art. no. 033313

被引:42
作者
Kammerer, C
Cassabois, G
Voisin, C
Delalande, C
Roussignol, P
Lemaître, A
Gérard, JM
机构
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France
[2] CNRS, LPN, F-92225 Bagneux, France
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 03期
关键词
D O I
10.1103/PhysRevB.65.033313
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report systematic temperature-dependent measurements of photoluminescence excitation spectra in single self-assembled InAs/GaAs quantum dots. We studied the increase with temperature of the excited-state homogeneous linewidth for different quantum dots. We found a correlation between the acoustic phonon broadening efficiency and the background intensity in the photoluminescence excitation spectra. These results demonstrate the interaction of the discrete quantum dot excited states with a quasicontinuum of states and impose severe limitations on the isolated artificial macroatom scheme for a single quantum dot.
引用
收藏
页码:333131 / 333134
页数:4
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