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Method to deduce the critical size for interfacial delamination of patterned electrode structures and application to lithiation of thin-film silicon islands
被引:100
作者:
Haftbaradaran, Hamed
[1
]
Xiao, Xingcheng
[2
]
Verbrugge, Mark W.
[2
]
Gao, Huajian
[1
]
机构:
[1] Brown Univ, Sch Engn, Providence, RI 02912 USA
[2] Gen Motors Global Res & Dev Ctr, Chem Sci & Mat Syst Lab, Warren, MI 48090 USA
关键词:
Delamination;
Interface;
Patterned thin films;
Silicon negative electrodes;
LITHIUM;
CAPACITY;
FRACTURE;
ANODES;
D O I:
10.1016/j.jpowsour.2012.01.097
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Recent experiments have suggested that there is a critical size for patterned silicon (Si) thin film electrodes for delamination from a current collector during lithiation and delithiation cycling. However, no existing theories can explain this phenomenon, in spite of its potential importance in designing reliable electrodes for high-capacity lithium-ion batteries. In this study, we show that the observed delamination size effect can be rationalized by modeling thin film delamination in the presence of large scale interfacial sliding. A method is proposed to deduce the critical size for delamination based on the critical conditions for the nucleation and growth of edge or center cracks at the film-substrate interface under plane strain or axisymmetric conditions. Applications to lithiation of thin-film Si islands give results in excellent agreement with experimental observations. (C) 2012 Elsevier B.V. All rights reserved.
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页码:357 / 366
页数:10
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