Non-thermal photoexcited electron distributions in non-stoichiometric GaAs

被引：12

作者：

Marcinkevicius, S

Krotkus, A

Viselga, R

Olin, U

Jagadish, C

机构：

[1] LITHUANIA ACAD SCI,INST SEMICOND PHYS,LT-2600 VILNIUS,LITHUANIA

[2] ROYAL INST TECHNOL,DEPT PHYS 2,S-10044 STOCKHOLM,SWEDEN

[3] ROYAL INST TECHNOL,INST OPT RES,S-10044 STOCKHOLM,SWEDEN

[4] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI & ENGN,DEPT ELECT MAT ENGN,CANBERRA,ACT 0200,AUSTRALIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 04期

关键词：

D O I：

10.1088/0268-1242/12/4/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present experimental evidence of inverted photoluminescence spectra in GaAs. The spectra are measured for As-rich GaAs layers with ultrashort (of the order of 30-60 fs) carrier lifetimes. Ensemble Monte Carlo simulations performed using the molecular dynamics approach confirm that the observed PL spectra are generated by non-thermalized carriers several tens of femtoseconds after their excitation.

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页码：396 / 400

页数：5

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