Formation of a Stable p-n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

被引：210

作者：

Zhang, Y. J. ^{[1
,2
]}

Ye, J. T. ^{[1
,2
]}

Yornogida, Y. ^{[3
,4
]}

Takenobu, T. ^{[3
,4
]}

Iwasa, Y. ^{[1
,2
,5
]}

机构：

[1] Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[3] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Tokyo 1020076, Japan

[5] CEMS, Wako, Saitama 3510198, Japan

来源：

NANO LETTERS | 2013年 / 13卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

Molybdenum disulfide; electric double-layer transistor; ambipolar; p-n junction; THIN-FILM TRANSISTORS; VALLEY POLARIZATION; EMISSION;

D O I：

10.1021/nl400902v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

引用

页码：3023 / 3028

页数：6

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