InGaN blue light-emitting diodes with optimized n-GaN layer

In the extensive research dedicated recently to metal-organic chemical vapor deposition (MOCVD)-grown high-efficiency GaN LED device design, a significant effort has been made to increase the conductivity of p-GaN layers, while n-GaN layers received relatively little attention. We demonstrated, both experimentally and theoretically, that the resistivity of n-GaN layers has a profound effect on blue InGaN LED performance. Optimization of n-GaN epitaxial layers allows the achievement of device series resistances below 15 Ohms and forward voltages as low as 2.9 Volts at 20 mA. We have also shown that contactless measurements of sheet resistivity of the entire LED epitaxial structure closely correlate with the ohmic resistance of the GaN layer measured in the fabricated devices. This provides an excellent non-destructive characterization tool for n-GaN optimization. Insufficient n-GaN conductivity is shown to trigger a distinct degradation mechanism by initiating current crowding in a localized device area. InGaN LED lamps with optimized n-GaN layers had a high external quantum efficiency and a goad long-term reliability.